是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-9 |
包装说明: | O-MUPM-H1 | 针数: | 1 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.3 |
Is Samacsys: | N | 应用: | SOFT RECOVERY POWER |
外壳连接: | CATHODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.25 V | JEDEC-95代码: | DO-205AB |
JESD-30 代码: | O-MUPM-H1 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 5000 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 190 °C | 最低工作温度: | -65 °C |
最大输出电流: | 275 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 150 V | 最大反向恢复时间: | 5 µs |
子类别: | Rectifier Diodes | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | HIGH CURRENT CABLE |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N1672E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 150V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1672IL | MICROSEMI |
获取价格 |
暂无描述 | |
1N1672R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 150V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1672RIL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 275A, 150V V(RRM), | |
1N1673 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1673E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1673IL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1673ILE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1673R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1673RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN |