生命周期: | Active | 包装说明: | DO-9, 1 PIN |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.7 |
Is Samacsys: | N | 应用: | SOFT RECOVERY POWER |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-205AB | JESD-30 代码: | O-MUPM-H1 |
最大非重复峰值正向电流: | 5000 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 190 °C | 最低工作温度: | -65 °C |
最大输出电流: | 275 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
最大重复峰值反向电压: | 200 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N1673R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1673RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1673RIL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 275A, 200V V(RRM), | |
1N1674 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1674ILE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 300V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1674R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 300V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1674RIL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 275A, 300V V(RRM), | |
1N1675 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1675E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 400V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1675IL | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 400V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN |