1H3-TB-LF

更新时间： 2024-11-28 13:03:27

品牌	Logo	应用领域
WTE		功效
页数	文件大小	规格书
3页	48K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN

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1H3-TB-LF 数据手册

WTE

POWER SEMICONDUCTORS

1H1 – 1H8

1.0A MINIATURE HIGH EFFICIENCY RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.181grams (approx.)

Mounting Position: Any

R-1

Min

20.0

2.00

0.53

2.20

Dim

Max

—

3.50

0.64

2.60

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

1H1

1H2

1H3

1H4

1H5

1H6

1H7

1H8

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

210

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

(Note 1)

1.0

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.0

1.3

1.7

Peak Reverse Current

@T_A= 25°C

5.0

100

µA

At Rated DC Blocking Voltage @T_A= 100°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

t^rr

C^j

°C

T^j

-65 to +125

-65 to +150

Storage Temperature Range

T^STG

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1H1 – 1H8

1 of 3

12 3

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