Datasheet > 1H4(G)

1H4(G)

更新时间： 2024-09-13 14:46:07

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技术参数
数据手册

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1H4(G) 技术参数

Case Style：	R-1	Maximum average forward rectified current：	1
Maximum recurrent peak reverse voltage：	300	Peak forward surge current：	30
Maximum instantaneous forward voltage：	1.3	Maximum reverse current：	5.0
TRR(nS)：	50	class：	Diodes

1H4(G) 数据手册

1H1G-1H8G

High Efficiency Rectifiers

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 1.0 A

Features

R - 1

Diffused junction

Glass passivated chip junction

High current capability

High reliability

High surge current capability

Mechanical Data

Case:JEDEC R-1,molded plastic

Polarity: Color band denotes cathode

Weight: 0.007 ounces,0.20 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

UNITS

1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

200 300 400 600 800 1000

140 210 280 420 560 700

200 300 400 600 800 1000

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forw ard rectified current

1.0

I_F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

8.3ms single half-sine-w ave

I_FSM

30.0

superimposed on rated load @T_J=125

Maximum instantaneous forw ard voltage

@ 1.0 A

1.0

1.3

1.7

V_F

I_R

Maximum reverse current

@T_A=25

5.0

at rated DC blocking voltage

@T_A=100

100.0

Maximum reverse recovery time (Note1)

t _rr

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

C_J

R_θ

Operating junction temperature range

- 55 ---- + 150

T_J

Storage temperature range

T_STG

NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Measured at 1.0MH_Zand applied rev erse v oltage of 4.0V DC.

3. Thermal resistance from junction to ambient.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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