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1H4G PDF预览

1H4G

更新时间: 2024-02-23 07:15:26
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管功效
页数 文件大小 规格书
2页 284K
描述
HIGH EFFICIENCY RECTIFIER

1H4G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.64
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:400 V最大反向恢复时间:0.05 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1H4G 数据手册

 浏览型号1H4G的Datasheet PDF文件第2页 
CURRENT 1.0 Ampere  
VOLTAGE 50 to 1000 Volts  
1H1G THRU 1H8G  
Features  
· Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
R-1  
· Low forward voltage drop  
· High current capability  
· High reliability  
0.102(2.6)  
0.091(2.3)  
DIA.  
0.787(20.0)  
MIN.  
· Low power loss, high effciency  
· High surge current capability  
· High speed switching  
· Low leakage  
0.126(3.2)  
0.106(2.7)  
Mechanical Data  
· Case : R-1 molded plastic body  
· Epoxy : UL94V-0 rate flame retardant  
· Lead : Plated axial lead solderable per MIL-STR-750,  
method 2026  
· Polarity : Color band denotes cathode end  
· Mounting Position : Any  
0.787(20.0)  
MIN.  
0.025(0.65)  
0.021(0.55)  
DIA.  
Dimensions in inches and (millimeters)  
· Weight : 0.007 ounce, 0.19 gram  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G  
Symbols  
Units  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
V
Maximum DC blocking voltage  
V
DC  
100  
1000  
Maximum average forward rectified current  
0.375"(9.5mm) lead length TA=55℃  
I
(AV)  
1.0  
Amp  
Amps  
Volts  
Peak forward surge current 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
25.0  
1.3  
IFSM  
Maximum instantaneous forward voltage  
at 1.0A  
V
F
1.0  
1.7  
Maximum DC Reverse Current at rated DC  
blocking voltage  
5.0  
μA  
IR  
Maximum full load reverse current full cycle  
average. 0.375"(9.5mm) lead length at  
100  
TL=55℃  
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
Trr  
50  
20  
70  
15  
ns  
C
J
pF  
Operating Junction and Storage temperature  
Range  
TJ  
-65 to +150  
TSTG  
Notes:  
(1) Test conditions: I  
F=0.5A, IR=1.0A, Irr=0.25A.  
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.  

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