Datasheet > 1EDN7126G

1EDN7126G

更新时间： 2024-11-06 11:11:03

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极驱动驱动器
页数	文件大小	规格书
38页	1662K
描述
EiceDRIVER™ 200 V 高侧 TDI 栅极驱动器 IC，专为 CoolGaN™ SG HEMT 和硅 MOSFET 而优化

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中文翻译

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数据手册

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1EDN7126G 数据手册

EiceDRIVER^™ꢀEDNꢁꢀxꢂG

ꢃꢄꢄ V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features

•

Optimized for driving GaN SG HEMTs and Si MOSFETs

Fully diꢀerential logic input circuitry to avoid false triggering

in low-side or high-side operation

•

High common-mode input voltage range ꢁCMRꢂ up to ± ꢃꢄꢄ V

for high side operation

High immunity to common-mode voltage transitions ꢁꢅꢄꢄ

V/nsꢂ for robust operation during fast switching

•

Compatible with ꢆ.ꢆ V or ꢇ V input logic

V_DD

Four driving strength variants to optimize switching speed

without external gate resistors - up to ꢃ A source/sink current

capability

Active bootstrap clamp to avoid bootstrap capacitor

overcharging during dead-time

VOFF

CF-

OUT_SRC

OUT_SNK

CF+

•

VOFF_ADJ

BST

IN+

VDD

IN-

Active Miller clamp with ꢇ A sink capability to avoid induced

turn-on

VSS

•

Adjustable charge pump for negative turn-oꢀ supply voltage

Qualified for industrial applications according to the relevant

tests of JEDECꢈꢉ/ꢃꢄ/ꢃꢃ

Description

™

The ꢅEDNꢉꢅxꢊG is a single-channel gate-driver IC optimized for driving Infineon CoolGaN Schottky Gate

HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that

enable a high-performance system design with fast-switching transistors, including Truly Diꢀerential Input

ꢁTDIꢂ, four driving strength options, active Miller clamp, bootstrap voltage clamp, and adjustable charge pump.

Potential applications

•

Single channel:

•

Half-bridge ꢁꢃ x ꢅEDNꢉꢅxꢊGꢂ:

Synchronous rectifier

Class-E resonant wireless power

DC-DC converter

BLDC/PMSM motor drive

Class-D audio amplifier

Class-D resonant wireless power

Product portfolio

Part number

ꢅEDNꢉꢅꢅꢊG

ꢅEDNꢉꢅꢃꢊG

ꢅEDNꢉꢅꢆꢊG

ꢅEDNꢉꢅꢈꢊG

Peak source/ sink current

Input pulse blanking time

Package

ꢃ.ꢄ A

ꢅ.ꢇ A

ꢅ.ꢄ A

ꢄ.ꢇ A

ꢃꢄ ns

ꢈꢄ ns

ꢊꢄ ns

ꢋꢄ ns

PG-VSON-ꢅꢄ

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Rev. ꢃ.ꢅ

ꢃꢄꢃꢅ-ꢅꢄ-ꢅꢃ

12 3 4 5 6 7...38

中文翻译

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与1EDN7126G相关器件

型号	品牌	获取价格	描述	数据表
1EDN7126U	INFINEON	获取价格	200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
1EDN7136G	INFINEON	获取价格	EiceDRIVER™ 200 V 高侧 TDI 栅极驱动器 IC，专为 CoolGaN™
1EDN7136U	INFINEON	获取价格	200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
1EDN7146G	INFINEON	获取价格	EiceDRIVER™ 200 V 高侧 TDI 栅极驱动器 IC，专为 CoolGaN™
1EDN7146U	INFINEON	获取价格	200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
1EDN7511B	INFINEON	获取价格	advanced single-channel driver
1EDN7512B	INFINEON	获取价格	advanced single-channel driver
1EDN7512G	INFINEON	获取价格	advanced single-channel driver
1EDN751X	INFINEON	获取价格	EiceDRIVERâ¢
1EDN7550	INFINEON	获取价格	Single-channel EiceDRIVERâ¢ gate-drive IC wi

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