Datasheet > 1EDN7126U

1EDN7126U

更新时间： 2024-11-06 11:13:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
34页	1594K
描述
200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1EDN7126U 数据手册

1EDN71x6U EiceDRIVER^™

200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs

Features

•

Optimized for driving GaN SG HEMTs and Si MOSFETs

Fully diꢀerential logic input circuitry to avoid false triggering

in low-side or high-side operation

•

High common-mode input voltage range (CMR) up to ꢁ22 ꢂ

for high side operation

High immunity to common-mode voltage transitions (122

ꢂ/ns) for robust operation during fast switching

•

Compatible with 3.3 ꢂ or 5 ꢂ input logic

Four driving strength variants to optimize switching speed

without external gate resistors - up to ꢁ A source/sink current

capability

•

Active bootstrap clamp to avoid bootstrap capacitor

overcharging during dead-time

Active Miller clamp with 5 A sink capability to avoid induced

turn-on

Qualified for industrial applications according to the relevant

tests of JEDEC47/ꢁ2/ꢁꢁ

Description

™

The 1EDN71x6U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN Schottky Gate

HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that

enable a high-performance system design with GaN SG HEMTs, including Truly Diꢀerential Input, four driving

strength options, active Miller clamp, and bootstrap voltage clamp.

Potential applications

•

Single channel:

•

Half-bridge (ꢁ x 1EDN71x6U):

Synchronous rectifier

Class-E resonant wireless power

DC-DC converter

BLDC/PMSM motor drive

Class-D audio amplifier

Class-D resonant wireless power

Product portfolio

Part number

1EDN7116U

1EDN71ꢁ6U

1EDN7136U

1EDN7146U

Peak source/sink current

Input pulse blanking time

Package

PG-TSNP-7

ꢁ.2 A

1.5 A

1.2 A

2.5 A

ꢁ2 ns

42 ns

62 ns

82 ns

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Rev. ꢁ.2

ꢁ2ꢁꢁ-27-ꢁ2

12 3 4 5 6 7...34

中文翻译

下载PDF

与1EDN7126U相关器件

型号	品牌	获取价格	描述	数据表
1EDN7136G	INFINEON	获取价格	EiceDRIVER™ 200 V 高侧 TDI 栅极驱动器 IC，专为 CoolGaN™
1EDN7136U	INFINEON	获取价格	200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
1EDN7146G	INFINEON	获取价格	EiceDRIVER™ 200 V 高侧 TDI 栅极驱动器 IC，专为 CoolGaN™
1EDN7146U	INFINEON	获取价格	200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
1EDN7511B	INFINEON	获取价格	advanced single-channel driver
1EDN7512B	INFINEON	获取价格	advanced single-channel driver
1EDN7512G	INFINEON	获取价格	advanced single-channel driver
1EDN751X	INFINEON	获取价格	EiceDRIVERâ¢
1EDN7550	INFINEON	获取价格	Single-channel EiceDRIVERâ¢ gate-drive IC wi
1EDN7550B	INFINEON	获取价格	Single-channel EiceDRIVERâ¢ gate-drive IC wi