Datasheet > 1C5550GBH

1C5550GBH

更新时间： 2024-11-29 19:20:47

品牌	Logo	应用领域
SENSITRON		二极管
页数	文件大小	规格书
3页	103K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1C5550GBH 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.63	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1C5550GBH 数据手册

1C5550, 1C5551, 1C5552, 1C5553, 1C5554

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATASHEET 4312, REV C

STANDARD RECOVERY SILICON RECTIFIER DIE

Applications:



Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode

Features:



Glass Passivated Epitaxial Diode with Mesa Structure

Soft Reverse Recovery at Low and High Temperature

Low Forward Voltage Drop and Low Reverse Current

Electrically and Mechanically Stable during and after Packaging

Maximum Ratings:

Characteristics

Peak Inverse Voltage

1C5550

1C5551

1C5552

Symbol

V_RWM

Condition

Max.

Units

200

400

600

800

1000

1C5553

1C5554

Max. Output Current

I_O

50% duty cycle, rectangular

wave form; T_A= 55 ^oC

8.3 ms, sine pulse ⁽¹⁾

3.0

Max. Peak One Cycle Non-

Repetitive Surge Current

Max. Junction Temperature

Max. Storage Temperature

Reverse Recovery Time

I_FSM

100

T_J

T_stg

t_rr

-55 to +175

-55 to +200

2.0

C

µS

I_F=0.5A, I_R=1.0A, I_RM=0.25A

Electrical Characteristics:

Characteristics

Max. Forward Voltage Drop

1C5550

1C5551

1C5552

Symbol

Condition

9A, pulse, T_J= 25 C

Max.

Units

V_F1

1.2

1.3

1C5553

1C5554

Max. Reverse Current

I_R1

I_R2

1.0

V_R= V_RWM, pulse, T_J= 25 C

V_R= V_RWM, pulse, T_J= 125 C

A

⁽¹⁾in TO package

12 3

中文翻译

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