1C5550, 1C5551, 1C5552, 1C5553, 1C5554
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4312, REV C
STANDARD RECOVERY SILICON RECTIFIER DIE
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Glass Passivated Epitaxial Diode with Mesa Structure
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop and Low Reverse Current
Electrically and Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Peak Inverse Voltage
1C5550
1C5551
1C5552
Symbol
VRWM
Condition
Max.
Units
V
-
200
400
600
800
1000
1C5553
1C5554
Max. Output Current
IO
50% duty cycle, rectangular
wave form; TA = 55 oC
8.3 ms, sine pulse (1)
3.0
A
A
Max. Peak One Cycle Non-
Repetitive Surge Current
Max. Junction Temperature
Max. Storage Temperature
Reverse Recovery Time
IFSM
100
TJ
Tstg
trr
-
-
-55 to +175
-55 to +200
2.0
C
C
µS
IF=0.5A, IR=1.0A, IRM=0.25A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
1C5550
1C5551
1C5552
Symbol
Condition
9A, pulse, TJ = 25 C
Max.
Units
V
VF1
1.2
1.2
1.2
1.3
1.3
1C5553
1C5554
Max. Reverse Current
IR1
IR2
1.0
60
VR = VRWM, pulse, TJ = 25 C
VR = VRWM, pulse, TJ = 125 C
A
A
(1) in TO package
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