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1C5550GG-R PDF预览

1C5550GG-R

更新时间: 2024-11-29 19:20:47
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
3页 103K
描述
Rectifier Diode,

1C5550GG-R 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.63二极管类型:RECTIFIER DIODE
Base Number Matches:1

1C5550GG-R 数据手册

 浏览型号1C5550GG-R的Datasheet PDF文件第2页浏览型号1C5550GG-R的Datasheet PDF文件第3页 
1C5550, 1C5551, 1C5552, 1C5553, 1C5554  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATASHEET 4312, REV C  
STANDARD RECOVERY SILICON RECTIFIER DIE  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Glass Passivated Epitaxial Diode with Mesa Structure  
Soft Reverse Recovery at Low and High Temperature  
Low Forward Voltage Drop and Low Reverse Current  
Electrically and Mechanically Stable during and after Packaging  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
1C5550  
1C5551  
1C5552  
Symbol  
VRWM  
Condition  
Max.  
Units  
V
-
200  
400  
600  
800  
1000  
1C5553  
1C5554  
Max. Output Current  
IO  
50% duty cycle, rectangular  
wave form; TA = 55 oC  
8.3 ms, sine pulse (1)  
3.0  
A
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Max. Junction Temperature  
Max. Storage Temperature  
Reverse Recovery Time  
IFSM  
100  
TJ  
Tstg  
trr  
-
-
-55 to +175  
-55 to +200  
2.0  
C  
C  
µS  
IF=0.5A, IR=1.0A, IRM=0.25A  
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop  
1C5550  
1C5551  
1C5552  
Symbol  
Condition  
9A, pulse, TJ = 25 C  
Max.  
Units  
V
VF1  
1.2  
1.2  
1.2  
1.3  
1.3  
1C5553  
1C5554  
Max. Reverse Current  
IR1  
IR2  
1.0  
60  
VR = VRWM, pulse, TJ = 25 C  
VR = VRWM, pulse, TJ = 125 C  
A  
A  
(1) in TO package  
©2019 Sensitron Semiconductor (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com  

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