1A6GV-J

更新时间： 2024-10-30 13:03:27

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
2页	211K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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1A6GV-J 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.62
二极管类型：	RECTIFIER DIODE	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Matte Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1A6GV-J 数据手册

1A1

THRU

1A7

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* High reliability

* Low leakage

* Low forward voltage drop

* High current capability

R-1

MECHANICAL DATA

* Case: Molded plastic black body

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.19 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

1A1

1A2

100

1A3

200

1A4

400

1A5

600

1A6

800

1A7

UNITS

Volts

RRM

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

1000

RMS

140

200

280

400

420

600

560

800

700

100

1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

1.0

Amps

at TA

= 25^oC

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

⁰C/W

⁰C

Typical Junction Capacitance (Note)

Typical Thermal Resistance

R θ J A

, TSTG

Operating and Storage Temperature Range

-65 to + 150

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

CHARACTERISTICS

SYMBOL

1A1

1A2

1A3

1A4

1.1

5.0

1A5

1A6

1A7

UNITS

Volts

Maximum Instantaneous Forward Voltage at 1.0A DC

= 25^oC

= 100^oC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

uAmps

Maximum Full Load Reverse Current Full Cycle Average

.375” (9.5mm) lead length at T

= 75^oC

uAmps

1998-8

100

NOTES : Measured at 1 MH and applied reverse voltage of 4.0 volts

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