Datasheet > 1A6

1A6

更新时间： 2024-11-01 06:25:27

品牌	Logo	应用领域
SYNSEMI		整流二极管
页数	文件大小	规格书
2页	25K
描述
SILICON RECTIFIER DIODES

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1A6 数据手册

SILICON RECTIFIER DIODES

R-1

1A1 ~ 1A7

PRV : 50 - 1000 Volts

Io : 1.0 Ampere

1.00 (25.4)

MIN.

FEATURES :

* High current capability

0.099 (2.51)

0.95 (2.42)

* High reliability

* Low reverse current

* Low forward voltage drop

0.138 (3.5)

0.114 (2.9)

1.00 (25.4)

MIN.

0.024 (0.6)

MECHANICAL DATA :

0.020 (0.5)

* Case : Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.20 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

UNIT

1A1

1A2

1A3

1A4

1A5

1A6

1A7

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 50 °C

Peak Forward Surge Current

IF(AV)

1.0

IFSM

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 1.0 A.

1.1

5.0

Maximum DC Reverse Current Ta = 25 °C

IR(H)

at rated DC Blocking Voltage

Typical Junction Capacitance (1)

Typical Thermal Resistance (2)

Junction Temperature Range

Storage Temperature Range

Ta = 100 °C

°C/W

°C

RqJA

- 65 to + 125

- 65 to + 150

TSTG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2) Thermal Resistance from Junction to Ambient 0.375" (9.5mm) Lead Length

Page 1 of 2

Rev. 02 : January 10, 2004

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