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1N4007L PDF预览

1N4007L

更新时间: 2024-11-13 22:37:55
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
2页 62K
描述
1.0A RECTIFIER

1N4007L 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.03外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1000 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

1N4007L 数据手册

 浏览型号1N4007L的Datasheet PDF文件第2页 
1N4001/L - 1N4007/L  
1.0A RECTIFIER  
Features  
·
·
Diffused Junction  
High Current Capability and Low Forward  
Voltage Drop  
A
B
A
·
·
·
Surge Overload Rating to 30A Peak  
Low Reverse Leakage Current  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
D
Mechanical Data  
DO-41 Plastic  
A-405  
Dim  
A
Min  
25.40  
4.06  
0.71  
2.00  
Max  
¾
Min  
Max  
¾
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
25.40  
4.10  
0.53  
2.00  
B
5.21  
0.864  
2.72  
5.20  
0.64  
2.70  
·
·
Polarity: Cathode Band  
C
Weight: DO-41 0.30 grams (approx)  
D
A-405 0.20 grams (approx)  
All Dimensions in mm  
·
·
Mounting Position: Any  
Marking: Type Number  
“L” Suffix Designates A-405 Package  
No Suffix Designates DO-41 Package  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Characteristic  
Symbol  
Unit  
4001/L 4002/L 4003/L 4004/L 4005/L 4006/L 4007/L  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
@ TA = 75°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@ IF = 1.0A  
VFM  
IRM  
1.0  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA 25°C  
=
5.0  
50  
mA  
@ TA = 100°C  
Cj  
RqJA  
TA  
Typical Junction Capacitance (Note 2)  
15  
8
pF  
K/W  
°C  
Typical Thermal Resistance Junction to Ambient  
Maximum DC Blocking Voltage Temperature  
Operating and Storage Temperature Range (Note 3)  
100  
+150  
Tj, TSTG  
-65 to +175  
°C  
Notes:  
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1. MHz and applied reverse voltage of 4.0V DC.  
3. JEDEC Value.  
DS28002 Rev. E-2  
1 of 2  
1N4001/L-1N4007/L  

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