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1N4007L-T PDF预览

1N4007L-T

更新时间: 2024-01-28 15:01:06
品牌 Logo 应用领域
美台 - DIODES 整流二极管
页数 文件大小 规格书
3页 66K
描述
1.0A RECTIFIER

1N4007L-T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.58
二极管类型:RECTIFIER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIED

1N4007L-T 数据手册

 浏览型号1N4007L-T的Datasheet PDF文件第2页浏览型号1N4007L-T的Datasheet PDF文件第3页 
SPICE MODELS: 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007  
1N4001/L - 1N4007/L  
1.0A RECTIFIER  
Features  
·
·
·
·
·
Diffused Junction  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 30A Peak  
A
B
A
Low Reverse Leakage Current  
Lead Free Finish, RoHS Compliant (Note 4)  
Mechanical Data  
C
D
·
Case: DO-41, A-405  
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
DO-41 Plastic  
A-405  
Dim  
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Min  
25.40  
4.06  
0.71  
2.00  
Max  
¾
Min  
Max  
¾
Terminals: Finish - Bright Tin. Plated Leads Solderable per  
MIL-STD-202, Method 208  
A
B
C
D
25.40  
4.10  
0.53  
2.00  
5.21  
0.864  
2.72  
5.20  
0.64  
2.70  
·
·
·
·
·
Polarity: Cathode Band  
Mounting Position: Any  
Ordering Information: See Last Page  
Marking: Type Number  
All Dimensions in mm  
“L” Suffix Designates A-405 Package  
No Suffix Designates DO-41 Package  
Weight: DO-41 0.30 grams (approximate)  
A-405 0.20 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Characteristic  
Symbol  
Unit  
4001/L 4002/L 4003/L 4004/L 4005/L 4006/L 4007/L  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
@ TA = 75°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@ IF = 1.0A  
VFM  
IRM  
1.0  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA 25°C  
=
5.0  
50  
mA  
@ TA = 100°C  
Cj  
RqJA  
TA  
Typical Junction Capacitance (Note 2)  
15  
8
pF  
K/W  
°C  
Typical Thermal Resistance Junction to Ambient  
Maximum DC Blocking Voltage Temperature  
Operating and Storage Temperature Range (Note 3)  
100  
+150  
Tj, TSTG  
-65 to +150  
°C  
Notes: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1. MHz and applied reverse voltage of 4.0V DC.  
3. JEDEC Value.  
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS28002 Rev. 7 - 2  
1 of 3  
1N4001/L-1N4007/L  
www.diodes.com  
ã Diodes Incorporated  

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