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1N4007GPT26R PDF预览

1N4007GPT26R

更新时间: 2024-11-05 05:05:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 41K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41,

1N4007GPT26R 数据手册

 浏览型号1N4007GPT26R的Datasheet PDF文件第2页浏览型号1N4007GPT26R的Datasheet PDF文件第3页 
1N4001GP - 1N4007GP  
Features  
Low forward voltage drop.  
High surge current capability.  
High reliability.  
DO-41  
High current capability.  
COLOR BAND DENOTES CATHODE  
General Purpose Rectifiers (Glass Passivated)  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
4001GP 4002GP 4003G 4004GP 4005GP 4006GP 4007GP  
VRRM  
IF(AV)  
Maximum Repetitive Reverse Voltage  
50  
100  
200  
400  
1.0  
600  
800  
1000  
V
A
Average Rectified Forward Current,  
.375 " lead length @ TA = 75°C  
Non-repetitive Peak Forward Surge  
Current  
IFSM  
30  
A
8.3 ms Single Half-Sine-Wave  
Storage Temperature Range  
-65 to +175  
-65 to +175  
°C  
°C  
Tstg  
TJ  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
3.0  
50  
W
RθJA  
°C/W  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Device  
Units  
4001GP 4002GP 4003G 4004GP 4005GP 4006GP 4007GP  
VF  
IR  
Forward Voltage @ 1.0 A  
1.1  
V
5.0  
50  
µA  
µA  
Reverse Current @ rated VR TA = 25°C  
TA = 125°C  
CT  
Total Capacitance  
8.0  
pF  
VR = 4.0 V, f = 1.0 MHz  
2001 Fairchild Semiconductor Corporation  
1N4001GP-1N4007GP, Rev. C  

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