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1N4007HF PDF预览

1N4007HF

更新时间: 2024-02-01 19:28:26
品牌 Logo 应用领域
TAK_CHEONG 二极管
页数 文件大小 规格书
2页 107K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, HALOGEN FREE, PLASTIC PACKAGE-2

1N4007HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.58
二极管类型:RECTIFIER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIED

1N4007HF 数据手册

 浏览型号1N4007HF的Datasheet PDF文件第2页 
Preliminary Data Sheet  
General Purpose Rectifiers  
Standard Recovery Plastic Silicon Rectifiers  
AXIAL LEAD  
DO-41  
Specification Features:  
Case: Epoxy, Molded  
DEVICE MARKING DIAGRAM  
Weight: 0.4 gram (approximately)  
Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are  
Readily Solderable  
Lead And Mounting Surface Temperature For Soldering Purposed:  
260Max. For 10 Seconds 1.16 Inch From Case  
RoHS Compliant  
1N4001  
KEL  
: Device Name 1N4001~1N4007  
: KEL Logo  
Low Reverse Leakage, High Forward Surge Capability  
Cathode Indicated By Polarity Band  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Parameter  
Symbol  
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007  
Units  
Maximum Repetitive Peak  
Reverse Voltage  
VRRM  
50  
50  
100  
100  
200  
200  
400  
400  
600  
600  
800  
800  
1000  
1000  
V
Maximum DC Blocking Voltage  
VR  
V
A
Maximum Average Forward  
Rectifier Current.  
IF(AV)  
1.0  
(0.375” Lead Length @ TA=75)  
Non-repetitive Peak Forward  
Surge Current.  
IFSM  
TJ, TSTG  
RθJA  
30  
-65 to +175  
65  
A
°C  
(8.3mS Single Half Sine-wave)  
Operating Junction and Storage  
Temperature Range  
Thermal Resistance  
(Junction to Ambient)  
°C/W  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Symbol  
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007  
Units  
5
uA  
Reverse Current @VR  
Forward Voltage @1A  
IR  
1.1  
15  
V
VF  
CT  
Total Capacitance  
@VR=4V, f=1MHz  
pF  
August 2007 Release / A  
Page 1  

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