Datasheet > 1812SMS-68NJLB

1812SMS-68NJLB

更新时间： 2024-02-22 08:22:41

品牌	Logo	应用领域
威讯 - RFMD		放大器电感器测试射频感应器脉冲功率放大器
页数	文件大小	规格书
10页	871K
描述
280W GaN Wideband Pulsed Power Amplifier

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技术参数
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1812SMS-68NJLB 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	1925
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8504.50.80.00	风险等级：	5.7
Is Samacsys：	N	大小写代码：	1925
构造：	Flat Top	型芯材料：	AIR
直流电阻：	0.0082 Ω	标称电感 (L)：	0.068 µH
电感器应用：	RF INDUCTOR	电感器类型：	GENERAL PURPOSE INDUCTOR
JESD-609代码：	e1	功能数量：	1
端子数量：	2	最高工作温度：	140 °C
最低工作温度：	-40 °C	封装高度：	4.2 mm
封装长度：	4.95 mm	封装形式：	SMT
封装宽度：	6.35 mm	包装方法：	TR, 7 Inch
最小质量因数（标称电感时）：	100	自谐振频率：	0.0015 MHz
形状/尺寸说明：	RECTANGULAR PACKAGE	屏蔽：	NO
表面贴装：	YES	端子面层：	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子位置：	DUAL ENDED	端子形状：	FLAT
测试频率：	150 MHz	容差：	5%
Base Number Matches：	1

1812SMS-68NJLB 数据手册

RFHA1025

Device Handling/Environmental Conditions

RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a

high humidity, high temperature environment.

GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or

evaluation boards.

GaN HEMT Capacitances

The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.

These capacitances exist across all three terminals of the device. The physical manufactured characteristics of

the device determine the value of the C_DS(drain to source), C_GS(gate to source) and C_GD(gate to drain). These

capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances

measured with the gate pinched off (V_GS= -8V) and zero volts applied to the drain. During the measurement pro-

cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.

Any internal matching is included in the terminal capacitance measurements. The capacitance values presented

in the typical characteristics table of the device represent the measured input (C_ISS), output (C_OSS), and reverse

(C_RSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:

C_ISS= C_GD+ C_GS

C_OSS= C_GD+ C_DS

C_RSS= C_GD

DC Bias

The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts V_GSthe drain of

the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken

to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care

not to exceed the gate voltage maximum limits. RFMD recommends applying V_GS= -5V before applying any V_DS

RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain

current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recom-

mended quiescent drain current (I_DQ) shown in the RF typical performance table is chosen to best represent the

operational characteristics for this device, considering manufacturing variations and expected performance. The

user may choose alternate conditions for biasing this device based on performance tradeoffs.

Mounting and Thermal Considerations

The thermal resistance provided as R_TH(junction to case) represents only the packaged device thermal charac-

teristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of

the die. At the same time, the package temperature is measured using a thermocouple touching the backside of

the die embedded in the device heatsink but sized to prevent the measurement system from impacting the

results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.

In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or

below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the

thermal resistance from ambient to the back of the package including heatsinking systems and air flow mecha-

nisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

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与1812SMS-68NJLB相关器件

型号	品牌	获取价格	描述	数据表
1812SMS-68NJLC	COILCRAFT	获取价格	General Purpose Inductor, 0.068uH, 5%, 1 Element, Air-Core, SMD, 1925, ROHS COMPLIANT
1812SMS-68NJLD	COILCRAFT	获取价格	General Purpose Inductor, 0.068uH, 5%, 1 Element, Air-Core, SMD, 1925, ROHS COMPLIANT
1812SMS-68NJSB	COILCRAFT	获取价格	General Purpose Inductor, 0.068uH, 5%, 1 Element, Air-Core, SMD, 1925,
1812SMS-68NJSC	COILCRAFT	获取价格	暂无描述
1812SMS-68NJSD	COILCRAFT	获取价格	General Purpose Inductor, 0.068uH, 5%, 1 Element, Air-Core, SMD, 1925,
1812SMS-68NJTB	COILCRAFT	获取价格	General Purpose Inductor, 0.068uH, 5%, 1 Element, Air-Core, SMD, 1925, ROHS COMPLIANT
1812SMS-68NJTC	COILCRAFT	获取价格	General Purpose Inductor, 0.068uH, 5%, 1 Element, Air-Core, SMD, 1925, ROHS COMPLIANT
1812SMS-68NJTD	COILCRAFT	获取价格	暂无描述
1812SMS-68N-L	COILCRAFT	获取价格	Midi Spring® Air Core Inductors
1812SMS-82N	COILCRAFT	获取价格	Air Core Inductors

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