5秒后页面跳转
175BGQ030_11 PDF预览

175BGQ030_11

更新时间: 2024-11-11 07:17:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 134K
描述
Schottky Rectifier, 175 A

175BGQ030_11 数据手册

 浏览型号175BGQ030_11的Datasheet PDF文件第2页浏览型号175BGQ030_11的Datasheet PDF文件第3页浏览型号175BGQ030_11的Datasheet PDF文件第4页浏览型号175BGQ030_11的Datasheet PDF文件第5页浏览型号175BGQ030_11的Datasheet PDF文件第6页浏览型号175BGQ030_11的Datasheet PDF文件第7页 
VS-175BGQ030  
Vishay Semiconductors  
www.vishay.com  
Schottky Rectifier, 175 A  
FEATURES  
• 150 °C max. operating junction temperature  
• High frequency operation  
• Ultralow forward voltage drop  
• Continuous high current operation  
Cathode  
Anode  
• Guard ring for enhanced ruggedness and long  
term reliability  
PowerTab®  
• Screw mounting only  
• Designed and qualified according to JEDEC-JESD47  
• PowerTab® package  
PRODUCT SUMMARY  
• Compliant to RoHS Directive 2002/95/EC  
Package  
PowerTab®  
DESCRIPTION  
IF(AV)  
175 A  
30 V  
The VS-175BGQ030 Schottky rectifier has been optimized  
for ultralow forward voltage drop specifically for low voltage  
output in high current AC/DC power supplies.  
The proprietary barrier technology allows for reliable  
operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
reverse battery protection, and redundant power  
subsystems.  
VR  
VF at IF  
IRM  
0.52 V  
650 mA at 125 °C  
125 °C  
TJ max.  
Diode variation  
EAS  
Single die  
80 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
Rectangular waveform  
TC  
VALUES  
175  
UNITS  
A
°C  
V
IF(AV)  
112  
VRRM  
IFSM  
30  
tp = 5 μs sine  
175 Apk (typical)  
TJ  
7400  
A
0.47  
V
VF  
TJ  
150  
°C  
°C  
Range  
- 55 to 150  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-175BGQ030  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
30  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 112 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
175  
A
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
7400  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
A
1400  
80  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 12 A, L = 1.12 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
12  
Revision: 04-Jul-11  
Document Number: 94583  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与175BGQ030_11相关器件

型号 品牌 获取价格 描述 数据表
175BGQ030J INFINEON

获取价格

SCHOTTKY RECTIFIER
175BGQ045 INFINEON

获取价格

SCHOTTKY RECTIFIER
175BGQ045 VISHAY

获取价格

Schottky Rectifier, 175 A
175BGQ045_11 VISHAY

获取价格

Schottky Rectifier, 175 A
175BGQ045J ETC

获取价格

45V 175A Schottky Discrete Diode in a PowIRtab (Short) package
175B-R698-FB RCD

获取价格

Fixed Resistor, Wire Wound,
175C HAMMOND

获取价格

Auto Line Transformer
175C MICROSEMI

获取价格

Silicon Controlled Rectifier
175C100B MICROSEMI

获取价格

Silicon Controlled Rectifier
175C100BE3 MICROSEMI

获取价格

Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A