VS-175BGQ030
Vishay Semiconductors
www.vishay.com
Schottky Rectifier, 175 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
PowerTab®
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab® package
PRODUCT SUMMARY
• Compliant to RoHS Directive 2002/95/EC
Package
PowerTab®
DESCRIPTION
IF(AV)
175 A
30 V
The VS-175BGQ030 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
VR
VF at IF
IRM
0.52 V
650 mA at 125 °C
125 °C
TJ max.
Diode variation
EAS
Single die
80 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rectangular waveform
TC
VALUES
175
UNITS
A
°C
V
IF(AV)
112
VRRM
IFSM
30
tp = 5 μs sine
175 Apk (typical)
TJ
7400
A
0.47
V
VF
TJ
150
°C
°C
Range
- 55 to 150
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-175BGQ030
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
30
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 112 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
175
A
Following any rated load
condition and with rated
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
7400
Maximum peak one cycle
non-repetitive surge current
IFSM
A
1400
80
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 12 A, L = 1.12 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
12
Revision: 04-Jul-11
Document Number: 94583
1
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