Datasheet > 1641110

1641110

更新时间： 2024-09-17 12:53:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	267K
描述
Advanced Process Technology

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1641110 数据手册

PD - 96404A

AUTOMOTIVE GRADE

AUIRFS3307Z

AUIRFSL3307Z

HEXFET^®Power MOSFET

75V

Features

Advanced Process Technology

V_DSS

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

4.6mΩ

5.8mΩ

128A

I_{D (Package Limited)}

120A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junctionoperatingtemperature, fastswitchingspeedand

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

D²Pak

TO-262

AUIRFS3307Z

AUIRFSL3307Z

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Parameter

Max.

128

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

120

512

230

1.5

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

± 20

6.7

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

E_{AS (Thermally limited)}

V/ns

Single Pulse Avalanche Energy

Avalanche Current

140

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

T_J

-55 to + 175

300

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

Thermal Resistance

Parameter

Typ.

–––

Max.

0.65

Units

R_θ

Junction-to-Case

Junction-to-Ambient (PCB Mount) , D²Pak

°C/W

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/17/11

12 3 4 5 6 7...13

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