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15GD120DN2 PDF预览

15GD120DN2

更新时间: 2024-11-05 21:53:59
品牌 Logo 应用领域
EUPEC 双极性晶体管
页数 文件大小 规格书
9页 251K
描述
IGBT Power Module

15GD120DN2 数据手册

 浏览型号15GD120DN2的Datasheet PDF文件第2页浏览型号15GD120DN2的Datasheet PDF文件第3页浏览型号15GD120DN2的Datasheet PDF文件第4页浏览型号15GD120DN2的Datasheet PDF文件第5页浏览型号15GD120DN2的Datasheet PDF文件第6页浏览型号15GD120DN2的Datasheet PDF文件第7页 
BSM 15 GD 120 DN2  
IGBT Power Module  
• Power module  
• 3-phase full-bridge  
• Including fast free-wheel diodes  
• Package with insulated metal base plate  
Type  
V
I
Package  
Ordering Code  
CE  
C
BSM 15 GD 120 DN2  
1200V 25A  
ECONOPACK 2  
ECONOPACK 2K  
C67076-A2504-A67  
C67070-A2504-A67  
BSM 15 GD120DN2E3224 1200V 25A  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-gate voltage  
V
V
1200  
V
CE  
CGR  
R
= 20 k  
1200  
± 20  
GE  
Gate-emitter voltage  
DC collector current  
V
GE  
I
A
C
T = 25 °C  
25  
15  
C
T = 80 °C  
C
Pulsed collector current, t = 1 ms  
I
p
Cpuls  
T = 25 °C  
50  
30  
C
T = 80 °C  
C
Power dissipation per IGBT  
P
W
tot  
T = 25 °C  
145  
C
Chip temperature  
T
T
+ 150  
°C  
j
Storage temperature  
-40 ... + 125  
stg  
Thermal resistance, chip case  
Diode thermal resistance, chip case  
Insulation test voltage, t = 1min.  
Creepage distance  
R
R
0.86  
K/W  
thJC  
thJC  
is  
1.5  
D
V
-
2500  
Vac  
mm  
16  
Clearance  
-
11  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
-
F
sec  
-
40 / 125 / 56  
1
Oct-20-1997  

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