Datasheet > 15GD120DN2E3224

15GD120DN2E3224

更新时间： 2022-11-24 21:41:41

品牌	Logo	应用领域
EUPEC		双极性晶体管
页数	文件大小	规格书
9页	251K
描述
IGBT Power Module

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数据手册

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15GD120DN2E3224 数据手册

BSM 15 GD 120 DN2

IGBT Power Module

• Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

Type

Package

Ordering Code

BSM 15 GD 120 DN2

1200V 25A

ECONOPACK 2

ECONOPACK 2K

C67076-A2504-A67

C67070-A2504-A67

BSM 15 GD120DN2E3224 1200V 25A

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

Ω

= 20 k

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

T = 80 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

T = 80 °C

Power dissipation per IGBT

tot

T = 25 °C

145

Chip temperature

+ 150

°C

Storage temperature

-40 ... + 125

stg

≤

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

0.86

K/W

thJC

≤ 1.5

2500

Vac

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

sec

40 / 125 / 56

Oct-20-1997

12 3 4 5 6 7...9

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