Datasheet > 15GD120DN2E3224

15GD120DN2E3224

更新时间： 2022-11-24 21:41:41

品牌	Logo	应用领域
EUPEC		双极性晶体管
页数	文件大小	规格书
9页	251K
描述
IGBT Power Module

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15GD120DN2E3224 数据手册

BSM 15 GD 120 DN2

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Switching Characteristics, Inductive Load at T = 125 °C

Turn-on delay time

= 600 V, V = 15 V, I = 15 A

d(on)

Ω

= 82

110

Gon

Rise time

= 600 V, V = 15 V, I = 15 A

Ω

= 82

Gon

Turn-off delay time

= 600 V, V = -15 V, I = 15 A

d(off)

Ω

= 82

400

600

100

Goff

Fall time

= 600 V, V = -15 V, I = 15 A

Ω

= 82

Goff

Free-Wheel Diode

Diode forward voltage

I = 15 A, V = 0 V, T = 25 °C

2.4

1.9

2.9

I = 15 A, V = 0 V, T = 125 °C

Reverse recovery time

I = 15 A, V = -600 V, V = 0 V

µs

µC

di /dt = -800 A/µs, T = 125 °C

0.1

Reverse recovery charge

I = 15 A, V = -600 V, V = 0 V

di /dt = -800 A/µs

T = 25 °C

T = 125 °C

Oct-20-1997

1 234 5 6 7...9

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