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15C02SP PDF预览

15C02SP

更新时间: 2024-10-28 06:21:31
品牌 Logo 应用领域
三洋 - SANYO 放大器
页数 文件大小 规格书
4页 31K
描述
Low-Frequency General-Purpose Amplifier Applications

15C02SP 技术参数

生命周期:Transferred包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.48Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):300
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):440 MHzBase Number Matches:1

15C02SP 数据手册

 浏览型号15C02SP的Datasheet PDF文件第2页浏览型号15C02SP的Datasheet PDF文件第3页浏览型号15C02SP的Datasheet PDF文件第4页 
Ordering number : ENN7356A  
NPN Epitaxial Planar Silicon Transistor  
15C02SP  
Low-Frequency  
General-Purpose Amplifier Applications  
Applications  
Package Dimensions  
unit : mm  
2033A  
Low-frequency amplifer, high-speed switching,  
small motor drive.  
[15C02SP]  
2.2  
4.0  
Features  
Large current capacitance.  
Low collector-to-emitter saturation voltage (resistance).  
0.4  
0.5  
R
(sat) typ=300m[I =1A, I =50mA].  
CE  
C
B
Ultrasmall package facilitates miniaturization in end  
products.  
Small ON-resistance (Ron).  
0.4  
0.4  
1
2
3
1.3  
1.3  
1 : Emitter  
2 : Collector  
3 : Base  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
3.0  
3.8nom  
SANYO : SPA  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
20  
15  
V
5
V
I
1
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
2
400  
A
CP  
P
mW  
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
100  
I
V
V
V
V
V
=12V, I =0  
nA  
nA  
CBO  
CB  
EB  
CE  
CE  
CB  
E
Emitter Cutoff Current  
DC Current Gain  
I
=4V, I =0  
100  
800  
EBO  
C
h
FE  
=2V, I =50mA  
300  
C
Gain-Bandwidth Product  
Output Capacitance  
Marking : YK  
f
T
=2V, I =50mA  
C
440  
4
MHz  
pF  
Cob  
=10V, f=1MHz  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
91003 TS IM / 13003 TS IM TA-100119 No.7356-1/4  

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