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150FDR06 PDF预览

150FDR06

更新时间: 2024-10-29 00:58:15
品牌 Logo 应用领域
尼尔 - NELLSEMI /
页数 文件大小 规格书
6页 1432K
描述
Fast Recovery Diodes

150FDR06 数据手册

 浏览型号150FDR06的Datasheet PDF文件第1页浏览型号150FDR06的Datasheet PDF文件第2页浏览型号150FDR06的Datasheet PDF文件第3页浏览型号150FDR06的Datasheet PDF文件第5页浏览型号150FDR06的Datasheet PDF文件第6页 
RoHS  
RoHS  
150FD(R)Series  
SEMICONDUCTOR  
Nell High Power Products  
Fig.4 Forward power loss characteristics  
300  
250  
200  
180°  
120°  
90°  
RMS Limit  
DC  
60°  
30°  
200  
Conduction Period  
100  
50  
T
= 175°C  
J
0
150 200 250 300  
100  
120  
140  
160  
180  
0
50  
100  
Average Forward Current (A)  
Maximum Allowable Ambient Temperature (°C)  
Fig.5 Maximum non-repetitive surge current  
Fig.6 Maximum non-repetitive surge current  
4000  
3500  
Maximum non repetitive surge current  
versus pulse train duration.  
Control of conduction may not be maintained.  
At any rated load condition and with  
rated vrrm applied following surge.  
3500  
3000  
2500  
2000  
1500  
1000  
500  
lnitial TJ =175°C  
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
3000  
2500  
2000  
1500  
1000  
500  
lnitial T = 175°C  
J
no voltage reapplied @ 50 Hz  
rated V  
reapplied @ 50 Hz  
rrm  
Per Junction  
Per Junction  
1
10  
100  
0.01  
0.1  
Pulse train duration (S)  
1
Number of equal amplitude half cycle  
current pulses(N)  
Fig.7 Forward voltage drop characteristics  
Fig.8 Thermal lmpedance RthJC characteristic  
10000  
1
0.1  
Steady State Value  
RthJC = 0.3 K/W  
(DC Operation)  
1000  
100  
TJ = 25°C  
0.01  
TJ = 175°C  
0.001  
0.01  
0.1  
1
10  
Square wave pulse duration (S)  
10  
0.5  
1
1.5  
2
2.5  
3
Instantaneous forward voltage (V)  
Page 4 of 6  
www.nellsemi.com  

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