Datasheet > 150GAL12DN2

150GAL12DN2

更新时间： 2022-01-21 16:03:00

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
5页	80K
描述
IGBT Module

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数据手册

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150GAL12DN2 数据手册

BSM 150 GAL 120 DN2

IGBT Power Module

• Single switch with chopper diode at collector

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

Package

Ordering Code

BSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

Ω

= 20 k

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

210

150

T = 80 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

420

300

T = 80 °C

Power dissipation per IGBT

tot

T = 25 °C

1250

Chip temperature

+ 150

°C

Storage temperature

-40 ... + 125

stg

Thermal resistance, chip case

Diode thermal resistance, chip case

Diode thermal resistance, chip-case,chopper

Insulation test voltage, t = 1min.

Creepage distance

≤ 0.1

K/W

thJC

≤ 0.25

THJC

≤

0.18

2500

Vac

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

sec

40 / 125 / 56

Nov-24-1997

12 3 4 5

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