Datasheet > 12TTS08SPBF_10

12TTS08SPBF_10

更新时间： 2024-11-11 12:50:15

品牌	Logo	应用领域
威世 - VISHAY		可控硅
页数	文件大小	规格书
7页	618K
描述
Phase Control SCR, 8 A

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12TTS08SPBF_10 数据手册

VS-12TTS08SPbF High Voltage Series

Vishay Semiconductors

Phase Control SCR, 8 A

FEATURES

• Meets MSL level 1, per J-STD-020, LF

maximum peak of 260 °C

Anode

• Compliant to RoHS directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21

definition

• Designed and qualified for industrial level

Gate

D²PAK

Cathode

APPLICATIONS

• Input rectification and crow-bar (soft start)

• Vishay input diodes, switches and output rectifiers which

are available in identical package outlines

PRODUCT SUMMARY

V_Tat 8 A

< 1.2 V

140 A

800 V

DESCRIPTION

I_TSM

The VS-12TTS08SPbF High Voltage Series of silicon

controlled rectifiers are specifically designed for medium

power switching and phase control applications. The glass

passivation technology used has reliable operation up to

125 °C junction temperature.

V_RRM

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter T_A= 55 °C, T_J= 125 °C,

common heatsink of 1 °C/W

13.5

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

UNITS

I_T(AV)

Sinusoidal waveform

12.5

I_T(RMS)

V_RRM/V_DRM

I_TSM

800

140

V_T

8 A, T_J= 25 °C

1.2

dV/dt

150

V/μs

A/μs

°C

dI/dt

100

T_J

Range

- 40 to 125

VOLTAGE RATINGS

PART NUMBER

V_RRM, MAXIMUM PEAK

REVERSE VOLTAGE

_DRM, MAXIMUM PEAK

DIRECT VOLTAGE

_RRM/I_DRM

AT 125 °C

VS-12TTS08SPbF

800

1.0

Document Number: 94499

Revision: 08-Jun-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5 6 7

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