Datasheet > 12TTS08SPBF_10

12TTS08SPBF_10

更新时间： 2022-05-13 20:14:26

品牌	Logo	应用领域
威世 - VISHAY		可控硅
页数	文件大小	规格书
7页	618K
描述
Phase Control SCR, 8 A

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12TTS08SPBF_10 数据手册

VS-12TTS08SPbF High Voltage Series

Phase Control SCR, 8 A

Vishay Semiconductors

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

T_J, T_Stg

- 40 to 125

°C

Maximum thermal resistance,

junction to case

R_thJC

R_thJA

R_thCS

DC operation

1.5

Maximum thermal resistance,

junction to ambient

°C/W

Typical thermal resistance,

case to heatsink

Mounting surface, smooth and greased

0.5

Approximate weight

0.07

oz.

minimum

6 (5)

kgf ⋅ cm

(lbf ⋅ in)

Mounting torque

Marking device

maximum

12 (10)

Case style D²PAK (SMD-220)

12TTS08S

125

120

115

110

105

12TTS08

thJC

180°

(DC) = 1.5 K/W

120°

90°

60°

30°

Conduction Angle

RM S Lim it

Conduction Angle

12TTS08

30°

60°

90°

120°

T = 125 ° C

180°

100

Average On-state Current (A)

Fig. 1 - Current Rating Characteristics

Fig. 3 - On-State Power Loss Characteristics

125

120

115

110

105

100

12TTS08

thJC

(DC) = 1.5 K/W

180°

120°

90°

60°

30°

Conduction Period

RM S Lim it

30°

Conduction Period

12TTS08

60°

90°

120°

T = 125°C

180°

Average On-state Current (A)

Fig. 4 - On-State Power Loss Characteristics

10 12 14

Average On-state Current (A)

Fig. 2 - Current Rating Characteristics

Document Number: 94499

Revision: 08-Jun-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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