Datasheet > 11N60S5

11N60S5

更新时间： 2024-11-08 22:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
12页	335K
描述
Cool MOS⑩ Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

11N60S5 数据手册

SPP11N60S5, SPB11N60S5

SPI11N60S5

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

600

0.38

Ω

DS(on)

• Ultra low gate charge

P-TO262

P-TO263-3-2

P-TO220-3-1

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-1

Type

Package

P-TO220-3-1 Q67040-S4198

P-TO263-3-2 Q67040-S4199

P-TO262

Ordering Code

Marking

11N60S5

SPP11N60S5

SPB11N60S5

SPI11N60S5

Q67040-S4338

Maximum Ratings

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

T = 100 °C

340

Pulsed drain current, t limited by T

Avalanche energy, single pulse

jmax

D puls

I = 5.5 A, V = 50 V

jmax

0.6

Avalanche energy, repetitive t limited by T

I = 11 A, V = 50 V

Avalanche current, repetitive t limited by T

jmax AR

Gate source voltage

±20

125

Gate source voltage AC (f >1Hz)

tot

Power dissipation, T = 25°C

°C

Operating and storage temperature

T , T

-55... +150

stg

Page 1

Rev. 2.1

2004-03-30

12 3 4 5 6 7...12

中文翻译

下载PDF

与11N60S5相关器件

型号	品牌	获取价格	描述	数据表
11N65K-MT	UTC	获取价格	N-CH
11N80	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N80-C	UTC	获取价格	N-CH
11N80C3	INFINEON	获取价格	Cool MOS™ Power Transistor
11N80G-T3P-T	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N80G-TC3-T	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N80L-T3P-T	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N80L-TC3-T	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N90	UTC	获取价格	11 Amps, 900 Volts N-CHANNEL POWER MOSFET
11N90_15	UTC	获取价格	N-CHANNEL POWER MOSFET