Datasheet > 11N80C3

11N80C3

更新时间： 2024-11-19 06:24:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
13页	677K
描述
Cool MOS™ Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

11N80C3 数据手册

SPP11N80C3

SPA11N80C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

800

0.45

Ω

DS(on)

PG-TO220-3-31 PG-TO220

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

P-TO220-3-31

Type

Package

Ordering Code

Marking

SPP11N80C3

PG-TO220

Q67040-S4438

11N80C3

SPA11N80C3

PG-TO220-3-31 SP000216320

11N80C3

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP

SPA

Continuous drain current

T = 25 °C

7.1

T = 100 °C

7.1

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

470

I =2.2A, V =50V

Avalanche energy, repetitive t limited by T

0.2

jmax

I =11A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage

±20

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

156

Operating and storage temperature

-55...+150

°C

stg

Rev. 2.4

Page 1

2005-08-24

12 3 4 5 6 7...13

中文翻译

下载PDF

与11N80C3相关器件

型号	品牌	获取价格	描述	数据表
11N80G-T3P-T	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N80G-TC3-T	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N80L-T3P-T	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N80L-TC3-T	UTC	获取价格	11A, 812V N-CHANNEL POWER MOSFET
11N90	UTC	获取价格	11 Amps, 900 Volts N-CHANNEL POWER MOSFET
11N90_15	UTC	获取价格	N-CHANNEL POWER MOSFET
11N90G-T3N-T	UTC	获取价格	N-CHANNEL POWER MOSFET
11N90G-T3P-T	UTC	获取价格	N-CHANNEL POWER MOSFET
11N90G-TA3-T	UTC	获取价格	11 Amps, 900 Volts N-CHANNEL POWER MOSFET
11N90G-TF1-T	UTC	获取价格	11 Amps, 900 Volts N-CHANNEL POWER MOSFET