Datasheet > 11N60K-MT

11N60K-MT

更新时间： 2022-02-26 11:54:55

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	220K
描述
N-CHANNEL DEPLETION-MODE POWER MOSFET

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11N60K-MT 数据手册

UNISONIC TECHNOLOGIES CO., LTD

11N60K-MT

Preliminary

Power MOSFET

11A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 11N60K-MT is an N-channel enhancement mode

power MOSFET. It uses UTC advanced planar stripe, DMOS

technology to provide customers perfect switching performance,

minimal on-state resistance. It also can withstand high energy pulse

in the avalanche and commutation mode.

The UTC 11N60K-MT is universally applied in electronic lamp

ballasts based on half bridge topology, high efficiency switched

mode power supplies, active power factor correction, etc.



FEATURES

* R_DS(ON)< 1.00 Ω @ V_GS= 10 V, I_D= 5.5 A

* Fast Switching

* With 100% Avalanche Tested



SYMBOL

2.Drain

1.Gate

3.Source

 ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

Tube

Lead Free

Halogen Free

11N60KG-TF2-T

D: Drain S: Source

11N60KL-TF2-T

TO-220F2

Note: Pin Assignment: G: Gate



MARKING

www.unisonic.com.tw

1 of 6

QW-R502-A99.c

12 3 4 5 6

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