Datasheet > 11N60K-MT

11N60K-MT

更新时间： 2022-02-26 11:54:55

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	220K
描述
N-CHANNEL DEPLETION-MODE POWER MOSFET

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11N60K-MT 数据手册

11N60K-MT

Preliminary

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V, I_D=250µA

600

V/°C

µA

Breakdown Voltage Temperature Coefficient ∆BV_DSS/∆T_JI_D=250μA,Referenced to 25°C

0.5

V_DS=600V, V_GS=0V

Drain-Source Leakage Current

I_DSS

I_GSS

V_DS=600V, T_J=125°C

V_DS=0V ,V_GS=±30V

100

µA

Gate-Source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

±100 nA

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D=250µA

V_GS=10V, I_D=5.5A

2.0

4.0

0.61 1.00

Ω

C_ISS

C_OSS

C_RSS

850 1200 pF

V_DS=25V,V_GS=0V,f=1.0MHz

Output Capacitance

139 150

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_DS=30V, V_GS=10V, I_D=0.5A

Gate-Source Charge

(Note 1, 2)

Gate-Drain Charge

Turn-ON Delay Time

Turn-ON Rise Time

V_DD=50V, I_D=1.3A, R_G=3Ω

(Note 1, 2)

120

Turn-OFF Delay Time

Turn-OFF Fall Time

t_D(OFF)

t_F

180 200

120

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

V_SD

t_rr

I_S=11A, V_GS=0V

1.4

V_GS=0V, I_S=11A,

dI_F/dt=100A/μs (Note 1)

μC

Q_RR

1.5

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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