Datasheet > 11N50L-TF3-T

11N50L-TF3-T

更新时间： 2022-09-11 00:05:37

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友顺 - UTC		/
页数	文件大小	规格书
6页	180K
描述
11A, 500V N-CHANNEL POWER MOSFET

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11N50L-TF3-T 数据手册

11N50

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V, I_D=250µA

500

V/°C

µA

Breakdown Voltage Temperature Coefficient ΔBV_DSS/ΔT_JI_D=250μA,Referenced to 25°C

0.5

V_DS=500V, V_GS=0V

Drain-Source Leakage Current

I_DSS

I_GSS

V_DS=500V, T_J=125°C

V_DS=0V ,V_GS=±30V

100

µA

Gate-Source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

±100 nA

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D=250µA

V_GS=10V, I_D=5.5A

2.0

4.0

0.48 0.55

Ω

C_ISS

C_OSS

C_RSS

1515 2055 pF

Output Capacitance

V_DS=25V,V_GS=0V,f=1.0MHz

185 235

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_DS=400V, V_GS=10V, I_D=11A

(Note 1, 2)

Gate-Source Charge

Gate-Drain Charge

Turn-ON Delay Time

Turn-ON Rise Time

150

V_DD=250V, I_D=11A, R_G=3Ω

(Note 1, 2)

Turn-OFF Delay Time

Turn-OFF Fall Time

t_D(OFF)

t_F

120 250

160

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

V_SD

t_rr

I_S=11A, V_GS=0V

1.4

μC

V_GS=0V, I_S=11A,

dI_F/dt=100A/μs (Note 1)

Q_RR

1.5

Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-462.c

www.unisonic.com.tw

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