是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.64 | Is Samacsys: | N |
雪崩能效等级(Eas): | 670 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.55 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
11N50L-TF3-T | UTC |
获取价格 |
11A, 500V N-CHANNEL POWER MOSFET | |
11N60KG-TF2-T | UTC |
获取价格 |
N-CHANNEL DEPLETION-MODE POWER MOSFET | |
11N60KL-TF2-T | UTC |
获取价格 |
N-CHANNEL DEPLETION-MODE POWER MOSFET | |
11N60K-MT | UTC |
获取价格 |
N-CHANNEL DEPLETION-MODE POWER MOSFET | |
11N60S5 | INFINEON |
获取价格 |
Cool MOS⑩ Power Transistor | |
11N65K-MT | UTC |
获取价格 |
N-CH | |
11N80 | UTC |
获取价格 |
11A, 812V N-CHANNEL POWER MOSFET | |
11N80-C | UTC |
获取价格 |
N-CH | |
11N80C3 | INFINEON |
获取价格 |
Cool MOS™ Power Transistor | |
11N80G-T3P-T | UTC |
获取价格 |
11A, 812V N-CHANNEL POWER MOSFET |