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113MT100KBS90PBF

更新时间： 2024-11-20 13:03:15

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极触发装置可控硅整流器局域网
页数	文件大小	规格书
9页	115K
描述
Silicon Controlled Rectifier, 1000V V(DRM), 1000V V(RRM), 6 Element

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113MT100KBS90PBF 数据手册

Bulletin I27503 08/97

MT..KB SERIES

THREE PHASE CONTROLLED BRIDGE

Power Modules

Features

55 A

90 A

Package fully compatible with the industry standard INT-A-pak

power modules series

110 A

High thermal conductivity package, electrically insulated case

Outstanding number of power encapsulated components

Excellent power volume ratio

4000 V

isolating voltage

RMS

UL E78996 approved

Description

A range of extremely compact, encapsulated three phase

controlled bridge rectifiers offering efficient and reliable

operation. They are intended for use in general purpose

and heavy duty applications.

Major Ratings and Characteristics

53MT.KB 93MT.KB 113MT.KB

52MT.KB 92MT.KB 112MT.KB Units

51MT.KB 91MT.KB 111MT.KB

Parameters

I_O

110

°C

@ T_C

I_FSM@50Hz

390

410

770

700

7700

950

1130

1180

6380

5830

63800

@60Hz

1000

4525

4130

I t

@50Hz

@60Hz

A s

I √t

45250

A √s

V_RRMrange

T_STGrange

800 to 1600

-40 to 125

°C

T_J

range

www.irf.com

12 3 4 5 6 7...9

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与113MT100KBS90PBF相关器件

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113MT120K	INFINEON	获取价格	Silicon Controlled Rectifier, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element
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113MT120KBPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 6 Element
113MT120KBS90	INFINEON	获取价格	THREE PHASE CONTROLLED BRIDGE
113MT120KBS90	VISHAY	获取价格	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 6 Element
113MT120KBS90PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 6 Element
113MT120KBS90PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 6 Element