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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 113MT160KB | INFINEON |
获取价格 |
THREE PHASE CONTROLLED BRIDGE |
|
| 113MT160KBPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 6 Element |
|
| 113MT160KBPBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 6 Element |
|
| 113MT160KBS90 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 6 Element |
|
| 113MT160KBS90 | INFINEON |
获取价格 |
THREE PHASE CONTROLLED BRIDGE |
|
| 113MT160KBS90PBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 6 Element |
|
| 113MT160KPBF | VISHAY |
获取价格 |
Three Phase Controlled Bridge (Power Modules), 55 A to 110 A |
|
| 113MT160KS90PBF | VISHAY |
获取价格 |
Three Phase Controlled Bridge (Power Modules), 55 A to 110 A |
|
| 113MT80K | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 110000mA I(T), 800V V(DRM), 800V V(RRM), 6 Element |
|
| 113MT80KB | INFINEON |
获取价格 |
THREE PHASE CONTROLLED BRIDGE |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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