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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 113MT160KB | INFINEON |
获取价格 |
THREE PHASE CONTROLLED BRIDGE |
|
| 113MT160KBPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 6 Element |
|
| 113MT160KBPBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 6 Element |
|
| 113MT160KBS90 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 6 Element |
|
| 113MT160KBS90 | INFINEON |
获取价格 |
THREE PHASE CONTROLLED BRIDGE |
|
| 113MT160KBS90PBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1600V V(DRM), 1600V V(RRM), 6 Element |
|
| 113MT160KPBF | VISHAY |
获取价格 |
Three Phase Controlled Bridge (Power Modules), 55 A to 110 A |
|
| 113MT160KS90PBF | VISHAY |
获取价格 |
Three Phase Controlled Bridge (Power Modules), 55 A to 110 A |
|
| 113MT80K | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 110000mA I(T), 800V V(DRM), 800V V(RRM), 6 Element |
|
| 113MT80KB | INFINEON |
获取价格 |
THREE PHASE CONTROLLED BRIDGE |
|
英伟达新AI芯片Rubin或提前半年亮相
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
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