Datasheet > 10PTxxG

10PTxxG

更新时间： 2024-10-29 01:07:27

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
5页	377K
描述
Stansard SCRs, 10A

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数据手册

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10PTxxG 数据手册

RoHS

10PT Series _RoHS

SEMICONDUCTOR

Fig.4 Relative variation of thermal impedance

versus pulse duration

Fig.3 Average on-state current versus case

temperature

K=[Z_th(j-c)/R_th(j-c)

]

I_T(AV)(A)

th(j-c)

TO-251/TO-252

TO-220AB

α=180°

th(j-a)

0.1

TO-220AB

Insulated

(°C)

t (s)

case

0.01

20 30 40 50 60 70 80 90 100 110 120 130

1E-3

1E+0

5E+2

1E-2

1E-1

1E+1

1E+2

Fig.5 Relative variation of gate trigger current

versus junction temperature

Fig.6 Surge peak on-state current versus number

of cycles

I_TSM(A)

I_GT,I_H,I_L[T ] / I_GT,I_H,I_L[T =25°C]

2.5

120

100

1.5

tp=10ms

One cycle

I_GT

Tj inital=25°C

I_H&I_L

0.5

Number of cycles

T (°C)

1000

100

-40 -30 -20 -10

10 20 30 40

60 70 80

100 110

Fig.7 Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp < 10 ms,

and corresponding values of l²t

Fig.8 On-state characteristics (maximum values)

I_TM(A)

I_TSM(A),I²t(A²s)

1000

100

Tj inital=25°C

j=max

I_TSM

100

I²t

j=25°C

VTM(V)

j=max

Vt0=0.82V

Rd=24mΩ

t (ms)

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