Datasheet > 10MQ100-M3

10MQ100-M3

更新时间： 2024-11-04 07:24:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	121K
描述
Schottky Rectifier, 1 A

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10MQ100-M3 数据手册

VS-10MQ100-M3

Vishay Semiconductors

www.vishay.com

Schottky Rectifier, 1 A

FEATURES

• Low forward voltage drop

• Guard ring for enhanced ruggedness and long

term reliability

Cathode

Anode

• Halogen-free according to IEC 61249-2-21

definition

SMA

• Small foot print, surface mountable

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

PRODUCT SUMMARY

Package

SMA

1 A

• Compliant to RoHS Directive 2002/95/EC

I_F(AV)

V_R

100 V

0.63 V

DESCRIPTION

V_Fat I_F

I_RM

The VS-10MQ100-M3 surface mount Schottky rectifier has

been designed for applications requiring low forward drop

and very small foot prints on PC boards. Typical

applications are in disk drives, switching power supplies,

converters, freewheeling diodes, battery charging, and

reverse battery protection.

1 mA at 125 °C

150 °C

T_Jmax.

Diode variation

E_AS

Single die

1.0 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

100

t_p= 5 μs sine

1.5 Apk, T_J= 125 °C

Range

120

V_F

0.68

T_J

- 55 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-10MQ100-M3

100

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

50 % duty cycle at T_L= 126 °C, rectangular waveform

On PC board 9 mm²island

1.5

(0.013 mm thick copper pad area)

Maximum average forward current

See fig. 4

I_F(AV)

50 % duty cycle at T_L= 135 °C, rectangular waveform

On PC board 9 mm²island

(0.013 mm thick copper pad area)

Maximum peak one cycle

non-repetitive surge current, T_J= 25 °C

See fig. 6

Following any rated

load condition and with

rated V_RRMapplied

5 μs sine or 3 μs rect. pulse

120

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 0.5 A, L = 8 mH

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

1.0

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.5

Revision: 10-Aug-11

Document Number: 93365

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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