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10MQ100NTRPBF PDF预览

10MQ100NTRPBF

更新时间: 2024-11-26 06:26:43
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管
页数 文件大小 规格书
5页 99K
描述
Schottky Rectifier, 2.1 A

10MQ100NTRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:7.15Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:1151121
Samacsys Pin Count:2Samacsys Part Category:Schottky Diode
Samacsys Package Category:Diodes MouldedSamacsys Footprint Name:DO-214AC ( S MA)
Samacsys Released Date:2018-05-29 12:54:07Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:120 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

10MQ100NTRPBF 数据手册

 浏览型号10MQ100NTRPBF的Datasheet PDF文件第2页浏览型号10MQ100NTRPBF的Datasheet PDF文件第3页浏览型号10MQ100NTRPBF的Datasheet PDF文件第4页浏览型号10MQ100NTRPBF的Datasheet PDF文件第5页 
10MQ100NPbF  
Vishay High Power Products  
Schottky Rectifier, 2.1 A  
FEATURES  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
Available  
RoHS*  
COMPLIANT  
Cathode  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
SMA  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for industrial level  
DESCRIPTION  
The 10MQ100NPbF surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and very small foot prints on PC boards. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
PRODUCT SUMMARY  
IF(AV)  
2.1 A  
100 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
2.1  
UNITS  
DC  
A
V
100  
tp = 5 µs sine  
1.5 Apk, TJ = 125 °C  
Range  
120  
A
VF  
0.68  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
10MQ100NPbF  
UNITS  
Maximum DC reverse voltage  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 126 °C, rectangular waveform  
On PC board 9 mm2 island  
(0.013 mm thick copper pad area)  
Maximum average forward current  
See fig. 4  
IF(AV)  
1.5  
A
Maximum peak one cycle  
non-repetitive surge current, TJ = 25 °C  
See fig. 6  
Following any rated  
load condition and with  
rated VRRM applied  
5 µs sine or 3 µs rect. pulse  
120  
30  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
0.5  
mJ  
A
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94119  
Revision: 16-Apr-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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