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10502

更新时间: 2024-02-15 08:12:49
品牌 Logo 应用领域
美高森美 - MICROSEMI 脉冲电子航空
页数 文件大小 规格书
4页 136K
描述
500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz

10502 数据手册

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10502  
500 Watts, 50 Volts, Pulsed  
Avionics 1030 / 1090 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55SM  
Common Base  
The 10502 is a high power COMMON BASE bipolar transistor. It is designed  
for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width  
and duty required for MODE-S &TCAS applications. The device has gold thin-  
film metallization and diffused ballasting for proven highest MTTF. The  
transistor includes input and output prematch for broadband capability. Low  
thermal resistance package reduces junction temperature, extends life.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation  
Device Dissipation @ 25oC1  
1458 Watts  
Maximum Voltage and Current  
BVces  
BVebo Emitter to Base Voltage  
Ic Collector Current  
Collector to Emitter Voltage  
65 Volts  
3.5 Volts  
40 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 200oC  
+ 230oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL CHARACTERISTICS  
TEST CONDITIONS  
MIN TYP MAX UNITS  
POUT  
PIN  
PG  
Output Power  
Input Power  
F = 1030/1090 MHz  
VCC = 50 Volts  
500  
W
W
dB  
%
70  
Power Gain  
8.5  
40  
PW = 32 µsec, DF = 2%  
Collector Efficiency  
ηc  
RL  
Return Loss  
10  
dB  
VSWR  
Load Mismatch Tolerance1  
F = 1090 MHz  
10:1  
BVEBO  
BVCES  
ICBO  
Emitter to Base Breakdown  
Collector to Emitter Breakdown  
Collector to Base Leakage  
DC - Current Gain  
Ie = 15 mA  
3.5  
65  
Volts  
Volts  
mA  
Ic = 60 mA  
VCB = 36V  
25  
hFE  
θjc1  
Ic = 5 A, Vce = 5 V  
20  
Thermal Resistance  
0.12  
oC/W  
Note 1: At rated output power and pulse conditions  
Rev. B: Updated July 2009  
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit  
our web site at www.microsemi.com or contact our factory direct.  

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