Datasheet > 10502_10

10502_10

更新时间： 2024-11-18 07:24:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		脉冲电子航空
页数	文件大小	规格书
4页	82K
描述
500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz

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10502_10 数据手册

10502

500 Watts, 50 Volts, Pulsed

Avionics 1030 / 1090 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55SM

Common Base

The 10502 is a high power COMMON BASE bipolar transistor. It is designed

for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width

and duty required for MODE-S &TCAS applications. The device has gold thin-

film metallization and diffused ballasting for proven highest MTTF. The

transistor includes input and output prematch for broadband capability. Low

thermal resistance package reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25^oC¹

1458 Watts

Maximum Voltage and Current

BVces

BVebo Emitter to Base Voltage

Ic Collector Current

Collector to Emitter Voltage

65 Volts

3.5 Volts

40 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 230^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

P_OUT

P_IN

P_G

Output Power

Input Power

F = 1030/1090 MHz

V_CC= 50 Volts

500

Power Gain

8.5

PW = 32 μsec, DF = 2%

Collector Efficiency

η_c

Return Loss

VSWR

Load Mismatch Tolerance¹

F = 1090 MHz

10:1

BV_EBO

BV_CES

I_CBO

Emitter to Base Breakdown

Collector to Emitter Breakdown

Collector to Base Leakage

DC - Current Gain

Ie = 15 mA

3.5

Volts

Ic = 60 mA

V_CB= 36V

h_FE

θjc¹

Ic = 5 A, Vce = 5 V

Thermal Resistance

0.12

^oC/W

Note 1: At rated output power and pulse conditions

Rev. C: August 2010

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

12 3 4

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