Datasheet > 10-PZ12NMA027ME-M340F63Y

10-PZ12NMA027ME-M340F63Y

更新时间： 2023-09-03 20:40:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
30页	13328K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PZ12NMA027ME-M340F63Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

MNPC BOOST Diode

Static

1,49

1,78

1,9

1,8⁽¹⁾

250

V_F

I_R

Forward voltage

125

150

Reverse leakage current

V_r= 1200 V

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

2,39

K/W

Dynamic

43,15

53,77

54,13

15,6

I_RM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

21,8

23,93

0,346

0,621

0,739

0,061

0,114

0,135

9526,24

2867,85

7503,89

di/dt=9346 A/µs

di/dt=7574 A/µs

di/dt=7571 A/µs

Q_r

Recovered charge

-5/15

350

125

150

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

(di_rf/dt)_max

125

150

09 Sep. 2022 / Revision 4

1...4 5 678 9 10...30

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