Datasheet > 10-PZ12NMA027ME-M340F63Y

10-PZ12NMA027ME-M340F63Y

更新时间： 2023-09-03 20:40:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
30页	13328K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PZ12NMA027ME-M340F63Y 数据手册

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10-PZ12NMA027ME-M340F63Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

MNPC BOOST Switch

Static

V_GE(th)

V_CEsat

I_CES

I_GES

r_g

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

V_CE= V_GE

0,0008

3,3

4,7

1,67

1,8

2,22⁽¹⁾

125

650

µA

240

None

5000

C_ies

C_res

Q_g

f = 1 Mhz

Reverse transfer capacitance

Gate charge

190

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

1,01

K/W

Dynamic

t_d(on)

Turn-on delay time

125

150

19,38

19,25

4,58

t_r

Rise time

125

150

5,52

5,9

R_gon= 2 Ω

R_goff= 2 Ω

79,29

101,82

107,88

11,97

12,03

13,03

0,146

0,24

t_d(off)

Turn-off delay time

Fall time

125

150

-5/15

350

t_f

125

150

Q_rFWD=0,346 µC

Q_rFWD=0,621 µC

Q_rFWD=0,739 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

0,272

0,251

0,383

0,412

E_off

125

150

09 Sep. 2022 / Revision 4

1...3 4 567 8 9...30

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