Datasheet > 10-PZ12NMA027ME-M340F63Y

10-PZ12NMA027ME-M340F63Y

更新时间： 2023-09-03 20:40:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
30页	13328K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PZ12NMA027ME-M340F63Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

MNPC BUCK Switch

Static

26,7

41,1

46,9

32,7⁽¹⁾

r_DS(on)

Drain-source on-state resistance

125

150

mΩ

V_GS(th)

I_GSS

I_DSS

r_g

Gate-source threshold voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Internal gate resistance

Gate charge

V_DS= V_GS

0,015

2,6

750

300

µA

Ω

1200

1,53

186

2850

240

22,8

3,3

Q_g

-5/20

800

C_iss

C_oss

C_rss

V_SD

Short-circuit input capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Diode forward voltage

f = 1 Mhz

1000

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,71

K/W

Dynamic

18,57

17,59

17,03

7,58

t_d(on)

Turn-on delay time

125

150

t_r

Rise time

125

150

6,48

6,49

R_gon= 4 Ω

R_goff= 4 Ω

38,52

41,98

42,76

12,06

10,8

t_d(off)

Turn-off delay time

Fall time

125

150

-5/15

350

t_f

125

150

10,7

Q_rFWD=0,283 µC

Q_rFWD=0,297 µC

0,163

0,143

0,141

0,07

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

0,076

0,079

09 Sep. 2022 / Revision 4

1 2 345 6 7...30

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