Datasheet > 10-F1126PA050M7-L828F09

10-F1126PA050M7-L828F09

更新时间： 2023-09-03 20:35:55

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	7402K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F1126PA050M7-L828F09

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

1,66

1,78

1,79

2,1⁽¹⁾

V_F

I_R

Forward voltage

125

150

Reverse leakage current

Thermal

V_r= 1200 V

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,22

K/W

28,72

32,83

32,97

339,05

434,87

511,31

4,93

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=338 A/µs

di/dt=450 A/µs

di/dt=498 A/µs

Q_r

Recovered charge

±15

600

125

150

7,08

μC

8,04

1,79

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

2,59

mWs

A/µs

3,33

194,94

128,35

114,47

(di_rf/dt)_max

125

150

01 Sep. 2021 / Revision 3

1 2 345 6 7...18

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