10F20HF3S thru 10F60HF3S
Pb
10F20HF3S/10F40HF3S/10F60HF3S
Pb Free Plating Product
10.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
ITO-220AB(TO-220F-3L)
Unit:inch(mm)
Features
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
※ ThinkiSemi latest&matured process FRD/FRED
※ Fast switching for high efficiency
※ Low forward voltage drop
※ High current capability
.130(3.3)
.114(2.9)
※ Low reverse leakage current
※ High surge current capability
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
.1
※ Case: Full Plastic Isolated Package ITO-220AB
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
(2.55)
(2.55)
Case
Case
Case
Case
※ Weight: 2.0 gram approximately
Doubler
Series
Negative
Positive
Tandem Polarity
Suffix "HF3D"
Tandem Polarity
Suffix "HF3T"
Common Cathode
Suffix "HF3"
Common Anode
Suffix "HF3S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
10F20HF3S
10F40HF3S
10F60HF3S
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
V
V
V
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current Tc=100°C
10.0
125
IF(AV)
IFSM
VF
A
A
V
(Total Device 2x5.0A=10.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Instantaneous Forward Voltage
@5.0A
0.85-0.95
1.00-1.25
1.25-1.50
(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25°C
At Rated DC Blocking Voltage @TJ=125°C
1.0
5.0
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
25-35
65
Trr
CJ
nS
pF
3.0
RθJC
°C/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
°C
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.