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10F20HF3S_V01 PDF预览

10F20HF3S_V01

更新时间: 2022-02-26 12:37:51
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 268K
描述
10.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

10F20HF3S_V01 数据手册

 浏览型号10F20HF3S_V01的Datasheet PDF文件第2页 
10F20HF3S thru 10F60HF3S  
10F20HF3S/10F40HF3S/10F60HF3S  
Pb Free Plating Product  
10.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers  
ITO-220AB(TO-220F-3L)  
Unit:inch(mm)  
Features  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
ThinkiSemi latest&matured process FRD/FRED  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.130(3.3)  
.114(2.9)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
.1  
Case: Full Plastic Isolated Package ITO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
(2.55)  
(2.55)  
Case  
Case  
Case  
Case  
Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "HF3D"  
Tandem Polarity  
Suffix "HF3T"  
Common Cathode  
Suffix "HF3"  
Common Anode  
Suffix "HF3S"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
PARAMETER  
SYMBOL  
10F20HF3S  
10F40HF3S  
10F60HF3S  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
V
V
V
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current Tc=100°C  
10.0  
125  
IF(AV)  
IFSM  
VF  
A
A
V
(Total Device 2x5.0A=10.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)  
Maximum Instantaneous Forward Voltage  
@5.0A  
0.85-0.95  
1.00-1.25  
1.25-1.50  
(Per Diode/Per Leg)  
Maximum DC Reverse Current @TJ=25°C  
At Rated DC Blocking Voltage @TJ=125°C  
1.0  
5.0  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-35  
65  
Trr  
CJ  
nS  
pF  
3.0  
RθJC  
°C/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
°C  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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