Datasheet > 10-F1126PA025M7-L826F09

10-F1126PA025M7-L826F09

更新时间： 2023-09-03 20:35:42

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	7445K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F1126PA025M7-L826F09 数据手册

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10-F1126PA025M7-L826F09

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

1,63

1,7

2,1

V_F

I_R

Forward voltage

125

150

1,69

Reverse leakage current

Thermal

V_r= 1200 V

µA

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink*

1,54

K/W

*Only valid with pre-applied Vincotech thermal interface material.

Dynamic

20,99

22,6

I_RRM

Peak recovery current

125

150

23,21

254,14

367,32

404,24

2,54

t_rr

Reverse recovery time

125

150

di/dt=645 A/µs

di/dt=673 A/µs

di/dt=633 A/µs

Q_r

Recovered charge

±15

600

125

150

3,88

μC

4,28

0,884

1,45

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

1,61

217,37

134,32

132,01

(di_rf/dt)_max

125

150

13 May. 2020 / Revision 1

1 2 345 6 7...18

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