Datasheet > 10-F1126PA025M7-L826F09

10-F1126PA025M7-L826F09

更新时间： 2023-09-03 20:35:42

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	7445K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F1126PA025M7-L826F09 数据手册

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10-F1126PA025M7-L826F09

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

0,0025

5,4

6,6

1,65

1,89

1,95

2,15

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

µA

500

None

4800

170

C_ies

C_oes

C_res

Q_g

Output capacitance

Reverse transfer capacitance

Gate charge

V_CC= 600 V

180

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink*

1,16

K/W

*Only valid with pre-applied Vincotech thermal interface material.

Dynamic

147,2

149,2

145,2

28,6

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

33,4

R_gon= 16 Ω

R_goff= 16 Ω

170,6

191,4

195,6

95,03

109,96

114,76

2,06

t_d(off)

Turn-off delay time

Fall time

125

150

±15

600

t_f

125

150

Q_rFWD=2,54 µC

Q_rFWD=3,88 µC

Q_rFWD=4,28 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

2,66

mWs

2,82

1,67

E_off

125

150

2,18

2,29

13 May. 2020 / Revision 1

1 234 5 6 7...18

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