Datasheet > 10-F006PPA020SB02-M685B3

10-F006PPA020SB02-M685B3

更新时间： 2023-09-03 20:25:05

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	12427K
描述
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching

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10-F006PPA020SB02-M685B3 数据手册

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10-F006PPA020SB02-M685B30

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

1,25

1,65

1,61

1,95⁽¹⁾

V_F

I_R

Forward voltage

125

Reverse leakage current

V_r= 600 V

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,81

K/W

10,06

13,55

173,99

233,08

0,883

1,79

I_RRM

Peak recovery current

Reverse recovery time

Recovered charge

125

t_rr

125

di/dt=731 A/µs

di/dt=708 A/µs

Q_r

±15

400

μC

125

0,236

0,474

36,18

85,35

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

125

(di_rf/dt)_max

125

15 Sep. 2021 / Revision 2

1...3 4 567 8 9...32

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