Datasheet > 10-F012PNA005M7-P848C29

10-F012PNA005M7-P848C29

更新时间： 2024-11-13 11:15:31

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	1780K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F012PNA005M7-P848C29 数据手册

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10-F012PNA005M7-P848C29

datasheet

1200 V / 5 A

flow PIM 0

Features

flow 0 housing

● IGBT M7 with low V_CEsatand improved EMC behavior

● Open emitter configuration

● Compact and low inductive design

● Builtin NTC

Schematic

Target applications

● Industrial Drives

Types

● 10-F012PNA005M7-P848C29

Maximum Ratings

Tjꢀ= 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Rectifier Diode

V_RRM

I_F

I_FSM

I²t

P_tot

T_jmax

Peak Repetitive Reverse Voltage

1600

ꢀ

Continuous (direct) forward current

Surge (non-repetitive) forward current

Surge current capability

200

50 Hz Single Half Sine Wave

T_j= 150 °C

T_s= 80 °C

t_p= 10 ms

A²s

°C

ꢀ

Total power dissipation

T_j= T_jmax

Maximum Junction Temperature

150

02 Jul. 2019 / Revision 1

12 3 4 5 6 7...20

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