Datasheet > 10-F006PPA020SB02-M685B3

10-F006PPA020SB02-M685B3

更新时间： 2023-09-03 20:25:05

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
32页	12427K
描述
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching

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10-F006PPA020SB02-M685B30

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

PFC Diode

Static

1,5

1,92⁽¹⁾

2,65

V_F

I_R

Forward voltage

125

150

1,44

1,42

Reverse leakage current

Thermal

V_r= 650 V

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,5

K/W

56,36

70,28

74,71

47,37

78,83

87,49

1,66

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=4427 A/µs

di/dt=4057 A/µs

di/dt=4001 A/µs

Q_r

Recovered charge

0/15

400

125

150

3,14

μC

3,57

0,555

1,02

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

1,17

1599

1123

1211

(di_rf/dt)_max

125

150

15 Sep. 2021 / Revision 2

1...5 6 789 10 11...32

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